| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
1N759A |
Silicon Zener Diode 400mW 12V, ±5% tolerance |
Texas Instruments |
| 2342 |
1N759A-1 |
12 V, 400 mW silicon zener diode |
BKC International Electronics |
| 2343 |
1N759ATR |
12V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 2344 |
1N759A_T50A |
12V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 2345 |
1N759A_T50R |
12V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 2346 |
1N759B |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 2347 |
1N759C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 2348 |
1N759D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 2349 |
1N770 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2350 |
1N771 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2351 |
1N771A |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2352 |
1N771B |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2353 |
1N772 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2354 |
1N772A |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2355 |
1N773 |
65 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2356 |
1N773A |
65 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2357 |
1N774 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2358 |
1N774A |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2359 |
1N775 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2360 |
1N776 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2361 |
1N777 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2362 |
1N781 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2363 |
1N781A |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2364 |
1N805 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2365 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2366 |
1N821 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 2367 |
1N821A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2368 |
1N823 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2369 |
1N823 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 2370 |
1N823A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
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