| No. |
Part Name |
Description |
Manufacturer |
| 2371 |
1N825 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2372 |
1N825 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 2373 |
1N825A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2374 |
1N827 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2375 |
1N827 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 2376 |
1N827A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2377 |
1N829 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2378 |
1N829 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 2379 |
1N829A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 2380 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
| 2381 |
1N909 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2382 |
1N910 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2383 |
1N911 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2384 |
1N914A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 2385 |
1N914B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 2386 |
1N916A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 2387 |
1N916B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 2388 |
1N933 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2389 |
1N935B |
Silicon Voltage Reference Diode temperature compensated 9.0V, Military Version USN/JAN |
Transitron Electronic |
| 2390 |
1N937B |
Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN |
Transitron Electronic |
| 2391 |
1N938B |
Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN |
Transitron Electronic |
| 2392 |
1N949 |
60 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 2393 |
1N957A |
6.8 V, 18.5 mA, silicon planar zener diode |
Honey Technology |
| 2394 |
1N957A |
6.8 V, zener diode |
Leshan Radio Company |
| 2395 |
1N957B |
6.8 V, 18.5 mA, silicon planar zener diode |
Honey Technology |
| 2396 |
1N957B_T50A |
6.8V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 2397 |
1N957B_T50R |
6.8V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 2398 |
1N958A |
7.5 V, 16.5 mA, silicon planar zener diode |
Honey Technology |
| 2399 |
1N958A |
7.5 V, zener diode |
Leshan Radio Company |
| 2400 |
1N958B |
7.5 V, 16.5 mA, silicon planar zener diode |
Honey Technology |
| | | |
