| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 2402 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 2403 |
2SC3068 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2404 |
2SC3069 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2405 |
2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2406 |
2SC3071 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2407 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 2408 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 2409 |
2SC3110 |
Si NPN epitaxial planar. RF wide band low-noise amplifier. |
Panasonic |
| 2410 |
2SC3187 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2411 |
2SC3265 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2412 |
2SC3268 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 2413 |
2SC3302 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 2414 |
2SC3311A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2415 |
2SC3312 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2416 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 2417 |
2SC3325 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2418 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 2419 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
| 2420 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 2421 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 2422 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 2423 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2424 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 2425 |
2SC3356 |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) |
NEC |
| 2426 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 2427 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 2428 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 2429 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 2430 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| | | |
