| No. |
Part Name |
Description |
Manufacturer |
| 2431 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 2432 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
| 2433 |
2SC3429 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 2434 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2435 |
2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2436 |
2SC3526(H) |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2437 |
2SC3526H |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2438 |
2SC3576 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2439 |
2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2440 |
2SC3582-T |
For amplify microwave and low noise. |
NEC |
| 2441 |
2SC3583 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2442 |
2SC3583-L |
For amplify microwave and low noise. |
NEC |
| 2443 |
2SC3583-T1B |
For amplify microwave and low noise. |
NEC |
| 2444 |
2SC3583-T2B |
For amplify microwave and low noise. |
NEC |
| 2445 |
2SC3585 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
NEC |
| 2446 |
2SC3585-L |
For amplify microwave and low noise. |
NEC |
| 2447 |
2SC3585-T1B |
For amplify microwave and low noise. |
NEC |
| 2448 |
2SC3585-T2B |
For amplify microwave and low noise. |
NEC |
| 2449 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 2450 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 2451 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 2452 |
2SC3605 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2453 |
2SC3606 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 2454 |
2SC3607 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 2455 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2456 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
| 2457 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2458 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2459 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 2460 |
2SC3663-L |
For amplify high frequency and low noise. |
NEC |
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