| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SA1627 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 242 |
2SA1757 |
High Speed Switching Transistor |
ROHM |
| 243 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 244 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 245 |
2SA2071T100 |
PNP High speed switching Transistor |
ROHM |
| 246 |
2SA2088FRA |
PNP High speed switching Transistor (Corresponds to AEC-Q101) |
ROHM |
| 247 |
2SA2088FRAT106 |
PNP High speed switching Transistor (Corresponds to AEC-Q101) |
ROHM |
| 248 |
2SA2088T106 |
PNP High speed switching Transistor |
ROHM |
| 249 |
2SA2094 |
PNP High speed switching Transistor |
ROHM |
| 250 |
2SA2094TL |
PNP High speed switching Transistor |
ROHM |
| 251 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 252 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 253 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 254 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 255 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 256 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 257 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 258 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 259 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 260 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 261 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 262 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 263 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 264 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 265 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 266 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 267 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 268 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 269 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 270 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
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