| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 272 |
2SB731 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 273 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 274 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 275 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
| 276 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 277 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 278 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 279 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 280 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 281 |
2SC1621 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 282 |
2SC1621R |
High Speed Switching NPN silicon epitaxial transistor |
NEC |
| 283 |
2SC1656 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) |
NEC |
| 284 |
2SC1658 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98141 is also the datasheet of 2SC1658 Grd C, see the Electrical Characteristics table) |
NEC |
| 285 |
2SC1662 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98241 is also the datasheet of 2SC1662 GRD C, see the Electrical Characteristics table) |
NEC |
| 286 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 287 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 288 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 289 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 290 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 291 |
2SC1924 |
NPN silicon high speed switching transistor (This datasheet of NE32740A series is also the datasheet of 2SC1924, see the Electrical Characteristics table) |
NEC |
| 292 |
2SC1925 |
NPN silicon high speed switching transistor (This datasheet NE32740B series is also the datasheet of 2SC1925, see the Electrical Characteristics table) |
NEC |
| 293 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 294 |
2SC2243 |
High speed switching transistor |
COLLMER SEMICONDUCTOR INC |
| 295 |
2SC2245 |
High speed switching transistor |
COLLMER SEMICONDUCTOR INC |
| 296 |
2SC2248 |
High speed switching transistor |
COLLMER SEMICONDUCTOR INC |
| 297 |
2SC2437 |
High speed switching transistor |
COLLMER SEMICONDUCTOR INC |
| 298 |
2SC2437 |
SUPER HIGH SPEED SWITCHING TRANSISTORS |
COLLMER SEMICONDUCTOR INC |
| 299 |
2SC2440 |
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
Fuji Electric |
| 300 |
2SC2542 |
High speed switching transistor |
COLLMER SEMICONDUCTOR INC |
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