| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N4236 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
| 242 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 243 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 244 |
2N4957 |
Application Note - UHF amplifier design using data sheet design curves |
Motorola |
| 245 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 246 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 247 |
2N5162 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 248 |
2N524 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 249 |
2N525 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 250 |
2N526 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 251 |
2N527 |
PNP germanium transistor to be used in the audio-frequency range |
Motorola |
| 252 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
| 253 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 254 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 255 |
2N5942 |
Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors |
Motorola |
| 256 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 257 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 258 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 259 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 260 |
2N706 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 261 |
2N706A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 262 |
2N708 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 263 |
2N914 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 264 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 265 |
2N918 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 266 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 267 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 268 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 269 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 270 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
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