| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1ZC75 |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
| 212 |
1ZC75A |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
| 213 |
1ZC82 |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
| 214 |
1ZC82A |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
| 215 |
1ZC91 |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
| 216 |
1ZC91A |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
| 217 |
2-OA99 |
Germanium Point Contact Type - FM-AM Detector General Use |
Panasonic |
| 218 |
2-OA99A |
Germanium Point Contact Type - FM-AM Detector General Use |
Panasonic |
| 219 |
2114BF |
Hybrid Circuit SWITCH used for high level multiplexing, A/D conversion, telemetry, and chopper applications |
Amelco Semiconductor |
| 220 |
24C08 |
8Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection |
ST Microelectronics |
| 221 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
| 222 |
24LC22A-I/P |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 223 |
24LC22A-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 224 |
24LC22AT-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
| 225 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 226 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 227 |
2N2369A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 228 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
| 229 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
| 230 |
2N2652 |
Dual NPN silicon transistors for use as a differential amplifier |
Motorola |
| 231 |
2N2652A |
Dual NPN silicon transistors for use as a differential amplifier |
Motorola |
| 232 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 233 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 234 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 235 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 236 |
2N3515 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 237 |
2N3518 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 238 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 239 |
2N4234 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
| 240 |
2N4235 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
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