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Datasheets for US

Datasheets found :: 33458
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No. Part Name Description Manufacturer
91 1N5833 Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. USHA India LTD
92 1N5834 Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. USHA India LTD
93 1N821 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
94 1N823 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
95 1N825 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
96 1N827 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
97 1N829 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
98 1N935B Silicon Voltage Reference Diode temperature compensated 9.0V, Military Version USN/JAN Transitron Electronic
99 1N937B Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN Transitron Electronic
100 1N938B Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN Transitron Electronic
101 1S100 Diffused silicon rectifier 750mA 100V, approved for military use, available under CV7026 to CV7030 Texas Instruments
102 1S101 Diffused silicon rectifier 750mA 200V, approved for military use, available under CV7026 to CV7030 Texas Instruments
103 1S103 Diffused silicon rectifier 750mA 400V, approved for military use, available under CV7026 to CV7030 Texas Instruments
104 1S105 Diffused silicon rectifier 750mA 600V, approved for military use, available under CV7026 to CV7030 Texas Instruments
105 1S107 Diffused silicon rectifier 750mA 800V, approved for military use, available under CV7026 to CV7030 Texas Instruments
106 1S109 Diffused silicon rectifier 750mA 1000V, approved for military use, available under CV7026 to CV7030 Texas Instruments
107 1S1219H Silicon Epitaxial Planar Diode, used for High Speed Switching Hitachi Semiconductor
108 1S1220H Silicon Epitaxial Planar Diode, used for High Speed Switching Hitachi Semiconductor
109 1S1420H Silicon Triple Diffused Diode, used for Level Shift Hitachi Semiconductor
110 1S1820 Silicon Schottky Barrier Diode, used for UHF TV Tuner Mixer Hitachi Semiconductor
111 1S1920 Silicon Diffused Junction Diode used for TV Horizontal Deflection Damper Hitachi Semiconductor
112 1S1921A Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V Hitachi Semiconductor
113 1S1921B Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V Hitachi Semiconductor
114 1S1921C Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V Hitachi Semiconductor
115 1S1921D Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V Hitachi Semiconductor
116 1S1921E Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V Hitachi Semiconductor
117 1S1921F Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V Hitachi Semiconductor
118 1S2074H Silicon Epitaxial Plana Diode, intended for use in High Speed Switching Hitachi Semiconductor
119 1S2076 Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V Hitachi Semiconductor
120 1S2076A Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V Hitachi Semiconductor


Datasheets found :: 33458
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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