| No. |
Part Name |
Description |
Manufacturer |
| 241 |
IXSH30N60B |
High Speed IGBT |
IXYS Corporation |
| 242 |
IXSH30N60BD1 |
High Speed IGBT with Diode |
IXYS Corporation |
| 243 |
IXSH30N60C |
High Speed IGBT |
IXYS Corporation |
| 244 |
IXSH30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 245 |
IXSH30N60U1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability |
IXYS Corporation |
| 246 |
IXSH40N60 |
High Speed IGBT |
IXYS Corporation |
| 247 |
IXSH40N60B |
High Speed IGBT |
IXYS Corporation |
| 248 |
IXSH50N60B |
Short Circuit SOA Capability |
IXYS Corporation |
| 249 |
IXSK30N60BD1 |
High Speed IGBT with Diode |
IXYS Corporation |
| 250 |
IXSK30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 251 |
IXSP10N60B2D1 |
High Speed IGBT with Diode |
IXYS Corporation |
| 252 |
IXST30N60B |
High Speed IGBT |
IXYS Corporation |
| 253 |
IXST30N60BD1 |
High Speed IGBT with Diode |
IXYS Corporation |
| 254 |
IXST30N60C |
High Speed IGBT |
IXYS Corporation |
| 255 |
IXST30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 256 |
IXST40N60B |
High Speed IGBT |
IXYS Corporation |
| 257 |
IXTH20N60 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 258 |
IXTM20N60 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 259 |
KF10N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 260 |
KF10N60P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 261 |
KGF20N60KDA |
IGBT |
Korea Electronics (KEC) |
| 262 |
KGF30N60KDA |
IGBT |
Korea Electronics (KEC) |
| 263 |
KGF40N60KDA |
IGBT |
Korea Electronics (KEC) |
| 264 |
KGF50N60KDA |
IGBT |
Korea Electronics (KEC) |
| 265 |
KGT40N60KDA |
IGBT |
Korea Electronics (KEC) |
| 266 |
KGT50N60KDA |
IGBT |
Korea Electronics (KEC) |
| 267 |
KMB2D0N60SA |
Low Voltage MOSFETs |
Korea Electronics (KEC) |
| 268 |
MDD100N600 |
100A 600V Double-Diode Compact Module |
IPRS Baneasa |
| 269 |
MGP20N60U |
Insulated Gate Bipolar Transistor |
Motorola |
| 270 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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