| No. |
Part Name |
Description |
Manufacturer |
| 271 |
MGW20N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 272 |
MGW30N60 |
Insulated Gate Bipolar Transistor |
Motorola |
| 273 |
MGY30N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 274 |
MGY40N60 |
Insulated Gate Bipolar Transistor |
Motorola |
| 275 |
MGY40N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 276 |
MSAFX20N60A |
N Channel MOSFET |
Microsemi |
| 277 |
MTB10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 278 |
MTB10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 279 |
MTB10N60E7T4 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 280 |
MTP10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 281 |
MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 282 |
NDF10N60Z |
Power MOSFET, N-Channel, 600 V, 0.75 Ω |
ON Semiconductor |
| 283 |
NGTB30N60FLW |
IGBT 600V 30A FS1 Solar/UPS |
ON Semiconductor |
| 284 |
NGTB30N60FW |
IGBT 600V 30A Gen Mkt |
ON Semiconductor |
| 285 |
NGTB30N60IHLW |
IGBT 600V 30A FS1 Induction Heating |
ON Semiconductor |
| 286 |
NGTB40N60FLW |
IGBT 600V 40A FS1 Solar/UPS |
ON Semiconductor |
| 287 |
NGTB40N60IHLW |
IGBT 600V 40A FS1 Induction Heating |
ON Semiconductor |
| 288 |
NGTB50N60FLW |
IGBT 600V 50A FS1 Solar/UPS |
ON Semiconductor |
| 289 |
NGTB50N60FW |
IGBT 600V 50A Gen Mkt |
ON Semiconductor |
| 290 |
NGTB50N60L2W |
IGBT |
ON Semiconductor |
| 291 |
NGTG20N60L2TF1G |
N-Channel IGBT 600V, 20A, VCE(sat);1.45V Single TO-3PF-3L |
ON Semiconductor |
| 292 |
NGTG30N60FLW |
IGBT only 600V 30A PFC High Frequency |
ON Semiconductor |
| 293 |
NGTG30N60FW |
IGBT only 600V 30A PFC |
ON Semiconductor |
| 294 |
NGTG50N60FLW |
IGBT |
ON Semiconductor |
| 295 |
NGTG50N60FW |
IGBT only 600V 50A PFC |
ON Semiconductor |
| 296 |
NTP10N60-D |
Power MOSFET 10 Amps, 600 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
| 297 |
PHP10N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 298 |
R1120N601A-TL |
Low noise 150mA LDO regulator. Output voltage 6.0V. L active type. Taping specification TL. |
Ricoh |
| 299 |
R1120N601B-TL |
Low noise 150mA LDO regulator. Output voltage 6.0V. H active type. Taping specification TL. |
Ricoh |
| 300 |
R1210N601A |
PWM Step-up DC/DC Converter |
Ricoh |
| | | |
