No. |
Part Name |
Description |
Manufacturer |
241 |
BAT46GW |
100 V, 250 mA Schottky barrier diode |
Nexperia |
242 |
BD529-1 |
NPN silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
243 |
BD529-5 |
NPN silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
244 |
BD530-1 |
PNP silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
245 |
BD530-5 |
PNP silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
246 |
BD544C |
100 V, PNP silicon power transistor |
TRANSYS Electronics Limited |
247 |
BD648 |
100 V, PNP silicon power darlington |
TRANSYS Electronics Limited |
248 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
249 |
BD901 |
8 A N-P-N darlington power transistor. 100 V. 70 W. |
General Electric Solid State |
250 |
BD901 |
100 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
251 |
BD902 |
100 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
252 |
BD902 |
100 V, PNP silicon power darlington |
TRANSYS Electronics Limited |
253 |
BR1100 |
SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS |
ON Semiconductor |
254 |
BR151 |
100 V, 15 A single-phase silicon bridge rectifier |
Invac |
255 |
BR251 |
100 V, 25 A single-phase silicon bridge rectifier |
Invac |
256 |
BSH114 |
100 V, N-channel Trench MOSFET |
Nexperia |
257 |
BSR33 |
PNP medium power transistors 60 to 100 Volts |
Zetex Semiconductors |
258 |
BSS123 |
100 V, N-channel Trench MOSFET |
Nexperia |
259 |
BSS123LT1-D |
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 |
ON Semiconductor |
260 |
BSS123LT1D |
Power MOSFET 170 mAmps/ 100 Volts |
ON Semiconductor |
261 |
BUK6D385-100E |
100 V, N-channel Trench MOSFET |
Nexperia |
262 |
BUK7K134-100E |
Dual N-channel 100 V, 121 mΩ standard level MOSFET |
Nexperia |
263 |
BUK7K29-100E |
Dual N-channel 100 V, 24.5 mΩ standard level MOSFET |
Nexperia |
264 |
BUK7K32-100E |
Dual N-channel 100 V, 27.5 mΩ standard level MOSFET |
Nexperia |
265 |
BUK7K45-100E |
Dual N-channel 100 V, 37.6 mΩ standard level MOSFET |
Nexperia |
266 |
BUK7K89-100E |
Dual N-channel 100 V, 82.5 mΩ standard level MOSFET |
Nexperia |
267 |
BUK7Y113-100E |
N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
268 |
BUK7Y113-100E |
N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
269 |
BUK7Y12-100E |
N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
270 |
BUK7Y12-100E |
N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
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