| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
| 182 |
2N6395 |
Thyristor, 12 amperes, 100 volt |
Teccor Electronics |
| 183 |
2N6401 |
Thyristor, 16 amperes, 100 volt |
Teccor Electronics |
| 184 |
2N6505 |
Thyristor, 25 amperes, 100 volt |
Teccor Electronics |
| 185 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
| 186 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 187 |
2N6755 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
| 188 |
2N6756 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
| 189 |
2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 190 |
2SD560 |
SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP/ 100 VOLT) |
Fujitsu Microelectronics |
| 191 |
2V060 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 100 V @ 1mA DC test current. |
NTE Electronics |
| 192 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 193 |
3EZ100D |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 194 |
3EZ100D1 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 195 |
3EZ100D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 100 V. 1% tolerance. |
Motorola |
| 196 |
3EZ100D10 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 197 |
3EZ100D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 100 V. 10% tolerance. |
Motorola |
| 198 |
3EZ100D2 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 199 |
3EZ100D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 100 V. 2% tolerance. |
Motorola |
| 200 |
3EZ100D3 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 201 |
3EZ100D4 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 202 |
3EZ100D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 100 V. |
Motorola |
| 203 |
3N254 |
100 V, 2 A, in-line glass passivated single phase rectifier bridge |
TRANSYS Electronics Limited |
| 204 |
3N254 |
100 V, 2 A, in-line glass passivated single phase rectifier bridge |
TRSYS |
| 205 |
5KP100 |
100 V, 5 mA, 5000 W unidirectional and bidirectional load dump glass passivated automotive T.V.S. |
Fagor |
| 206 |
5KP100 |
100 V, 5000 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 207 |
5KP100A |
100 V, 5 mA, 5000 W unidirectional and bidirectional load dump glass passivated automotive T.V.S. |
Fagor |
| 208 |
5KP100A |
100 V, 5000 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 209 |
5KP100AC |
100 V, 5 mA, 5000 W, glass passivated junction transient voltage suppressor |
TRSYS |
| 210 |
5KP100C |
100 V, 5 mA, 5000 W unidirectional and bidirectional load dump glass passivated automotive T.V.S. |
Fagor |
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