No. |
Part Name |
Description |
Manufacturer |
91 |
1N5271A |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
92 |
1N5271AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. Tolerance +-10%. |
Microsemi |
93 |
1N5271BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. Tolerance +-5%. |
Microsemi |
94 |
1N5271C |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
95 |
1N5271D |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
96 |
1N5271UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. |
Microsemi |
97 |
1N5378B |
100 V, 5 Watt surmetic 40 silicon zener diode |
Boca Semiconductor Corporation |
98 |
1N5378B |
100 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
99 |
1N5378B |
100 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
100 |
1N5392 |
100 V, 1.5 A silicon rectifier |
Invac |
101 |
1N5392 |
100 V, 1.5 A, plastic silicon rectifier |
TRANSYS Electronics Limited |
102 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
103 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
104 |
1N5392GP |
100 V, 1.5 A glass passivated junction rectifier |
Fagor |
105 |
1N5401 |
100 V, 3 A silicon rectifier |
Invac |
106 |
1N5401 |
3 AMPS, 100 Volts Silicon Rectifier |
ITT Semiconductors |
107 |
1N5401 |
100 V, 3 A, high current plastic silicon rectifier |
TRANSYS Electronics Limited |
108 |
1N5401GP |
100 V, 3 A glass passivated junction rectifier |
Fagor |
109 |
1N5416 |
100 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
110 |
1N567 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
111 |
1N5814 |
100 V, 20 A hyper fast recovery rectifier |
Solid State Devices Inc |
112 |
1N5949 |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
113 |
1N5949A |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
114 |
1N5949B |
100 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
115 |
1N5949C |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
116 |
1N5949D |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
117 |
1N6295 |
100 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
118 |
1N6295A |
100 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
119 |
1N6295C |
100 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
120 |
1N6295CA |
100 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| | | |