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Datasheets for BASE

Datasheets found :: 1925
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No. Part Name Description Manufacturer
241 2N6122 Epitaxial-base transistor for linear and switching applications SGS-ATES
242 2N6123 Silicon epitaxial-base NPN medium power transistor SGS-ATES
243 2N6123 Epitaxial-base transistor for linear and switching applications SGS-ATES
244 2N6124 Silicon epitaxial-base PNP medium power transistor SGS-ATES
245 2N6124 Epitaxial-base transistor for linear and switching applications SGS-ATES
246 2N6125 Silicon epitaxial-base PNP medium power transistor SGS-ATES
247 2N6125 Epitaxial-base transistor for linear and switching applications SGS-ATES
248 2N6126 Silicon epitaxial-base PNP medium power transistor SGS-ATES
249 2N6126 Epitaxial-base transistor for linear and switching applications SGS-ATES
250 2N6261 HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR SemeLAB
251 2N6288 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
252 2N6290 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
253 2N6292 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
254 2N6338A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
255 2N6339A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
256 2N6340A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
257 2N6341A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
258 2N6386 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
259 2N6387 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
260 2N6388 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
261 2N6428 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
262 2N6428A Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
263 2N6436A PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
264 2N6437A PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
265 2N6438A PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
266 2N6474 130 V, epitaxial-base NPN selicon versawatt transistor Boca Semiconductor Corporation
267 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State
268 2N6487 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. General Electric Solid State
269 2N6488 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. General Electric Solid State
270 2N6489 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. General Electric Solid State


Datasheets found :: 1925
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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