| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N5873/2 |
Silicon NPN EPIBASE AF Power Transistor |
IPRS Baneasa |
| 182 |
2N5874 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 183 |
2N5874 |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
| 184 |
2N5874A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 185 |
2N5874A |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
| 186 |
2N5874B |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 187 |
2N5874B |
Silicon NPN EPIBASE Audiofrequency power transistor |
IPRS Baneasa |
| 188 |
2N5875 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 189 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 190 |
2N5876 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 191 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 192 |
2N5877 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 193 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 194 |
2N5878 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 195 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 196 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 197 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 198 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 199 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 200 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 201 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 202 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 203 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 204 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 205 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 206 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 207 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 208 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 209 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 210 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
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