| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 62 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
| 63 |
2N3054 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 64 |
2N3055 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 65 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 66 |
2N3441 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 67 |
2N3442 |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX20 |
SESCOSEM |
| 68 |
2N3713 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 69 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 70 |
2N3714 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 71 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 72 |
2N3715 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 73 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 74 |
2N3716 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 75 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 76 |
2N3740 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 77 |
2N3741 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 78 |
2N3771 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 79 |
2N3772 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 80 |
2N3773 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 81 |
2N3789 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 82 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 83 |
2N3790 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 84 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 85 |
2N3791 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 86 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 87 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 88 |
2N3792 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 89 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 90 |
2N3792 |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
SemeLAB |
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