| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 92 |
2N3791 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 93 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 94 |
2N3791 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 95 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 96 |
2N3792 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 97 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 98 |
2N3792 |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
SemeLAB |
| 99 |
2N3792 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 100 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 101 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 102 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 103 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 104 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 105 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 106 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 107 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 108 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 109 |
2N4347 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 110 |
2N4348 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 111 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 112 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 113 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 114 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 115 |
2N4898X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
| 116 |
2N4899X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
| 117 |
2N4900X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
| 118 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 119 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 120 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
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