| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 242 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 243 |
2SB1314 |
2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 244 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 245 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 246 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 247 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 248 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 249 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 250 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 251 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 252 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
| 253 |
2SC3242 |
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 |
Isahaya Electronics Corporation |
| 254 |
2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A |
Isahaya Electronics Corporation |
| 255 |
2SC3243 |
900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 |
Isahaya Electronics Corporation |
| 256 |
2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 |
Isahaya Electronics Corporation |
| 257 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
| 258 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
| 259 |
2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 |
Isahaya Electronics Corporation |
| 260 |
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 |
Isahaya Electronics Corporation |
| 261 |
2SC3497 |
6A; 30W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 262 |
2SC3559 |
3A; 30W; V(ceo): 800V; NPN transistor. For switching regulation |
TOSHIBA |
| 263 |
2SC3560 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 264 |
2SC3561 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 265 |
2SC3562 |
10A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 266 |
2SC3563 |
10A; 40W; V(ceo): 450V; NPN transistor. For switching regulation |
TOSHIBA |
| 267 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
| 268 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
| 269 |
2SC3625 |
8A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 270 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
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