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Datasheets for CEO

Datasheets found :: 2149
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No. Part Name Description Manufacturer
121 2N5321 10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. Continental Device India Limited
122 2N5400 0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE Continental Device India Limited
123 2N5400 Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
124 2N5401 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
125 2N5401 Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
126 2N5401AI 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
127 2N5401SAM 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
128 2N5415 1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. Continental Device India Limited
129 2N5416 1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. Continental Device India Limited
130 2N5496 50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE Continental Device India Limited
131 2N5550 0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE Continental Device India Limited
132 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
133 2N5551 0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE Continental Device India Limited
134 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
135 2N5641 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor SGS Thomson Microelectronics
136 2N5642 V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistor Motorola
137 2N5642 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor SGS Thomson Microelectronics
138 2N5643 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor SGS Thomson Microelectronics
139 2N5679 10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
140 2N5680 10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
141 2N5681 10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
142 2N5682 10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
143 2N5770 0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE Continental Device India Limited
144 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
145 2N6034 W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. Continental Device India Limited
146 2N6036 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. Continental Device India Limited
147 2N6037 40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
148 2N6038 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
149 2N6039 W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. Continental Device India Limited
150 2N6080 V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor SGS Thomson Microelectronics


Datasheets found :: 2149
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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