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Datasheets for CEO

Datasheets found :: 2149
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No. Part Name Description Manufacturer
91 2N4401 0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. Continental Device India Limited
92 2N4401 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
93 2N4402 0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. Continental Device India Limited
94 2N4402 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
95 2N4403 0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. Continental Device India Limited
96 2N4403 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
97 2N4409 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE Continental Device India Limited
98 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
99 2N4923 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. Continental Device India Limited
100 2N5086 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE Continental Device India Limited
101 2N5086 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
102 2N5087 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE Continental Device India Limited
103 2N5087 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
104 2N5088 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE Continental Device India Limited
105 2N5088 Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
106 2N5089 0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE Continental Device India Limited
107 2N5089 Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
108 2N5172 0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE Continental Device India Limited
109 2N5179 0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. Continental Device India Limited
110 2N5191 40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. Continental Device India Limited
111 2N5192 40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. Continental Device India Limited
112 2N5210 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
113 2N5232 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
114 2N5232A 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
115 2N5294 36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
116 2N5294 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
117 2N5296 36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
118 2N5296 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
119 2N5298 36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
120 2N5320 10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. Continental Device India Limited


Datasheets found :: 2149
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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