| No. |
Part Name |
Description |
Manufacturer |
| 241 |
ERJU1TF1022U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
| 242 |
ERJU1TF1023U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
| 243 |
ERJUP6F1020V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 244 |
ERJUP6F1021V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 245 |
ERJUP6F1022V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 246 |
ERJUP6F1023V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 247 |
ERJUP6F1024V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 248 |
ERJUP8F1020V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 249 |
ERJUP8F1021V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 250 |
ERJUP8F1022V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 251 |
ERJUP8F1023V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
| 252 |
ERJXGNF1020U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 253 |
ERJXGNF1020Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 254 |
ERJXGNF1021U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 255 |
ERJXGNF1021Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 256 |
ERJXGNF1022U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 257 |
ERJXGNF1022Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 258 |
ERJXGNF1023U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 259 |
ERJXGNF1023Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 260 |
ERZE10F102 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 261 |
ERZE11F102 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 262 |
F102 |
Case, shape and dimensions |
IPRS Baneasa |
| 263 |
F102 |
Silicon rectifier diode |
IPRS Baneasa |
| 264 |
F102 |
Silicon Rectifier Diode 2A 100V |
IPRS Baneasa |
| 265 |
F102 |
2A 100V Rectifier Diode |
IPRS Baneasa |
| 266 |
F102 |
Shape and dimensions SITELESC package |
SESCOSEM |
| 267 |
F1020 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 268 |
F1021 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 269 |
F1022 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 270 |
F1027 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| | | |
