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Datasheets for F102

Datasheets found :: 457
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |
No. Part Name Description Manufacturer
331 MBRF10200 Discrete Devices -Diode-Schottky Taiwan Semiconductor
332 MBRF10200CT 10A SCHOTTKY BARRIER RECTIFIER Diodes
333 MBRF10200CT Discrete Devices -Diode-Schottky Taiwan Semiconductor
334 MBRF10200CT-LJ 10A SCHOTTKY BARRIER RECTIFIER Diodes
335 MBRF10200D Discrete Devices -Diode-Schottky Taiwan Semiconductor
336 MBRF1020CT 10 Amp Schottky Barrier Rectifier 20 to 100 Volts Micro Commercial Components
337 MICRF102 QwikRadioTM UHF ASK Transmitter Micrel Semiconductor
338 MICRF102BM QwikRadio UHF ASK Transmitter Micrel Semiconductor
339 MMBF102 N-Channel RF Amplfiier Fairchild Semiconductor
340 MPF102 N-Channel RF Amplifier Fairchild Semiconductor
341 MPF102 Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications Motorola
342 MPF102 JFET VHF Amplifier Motorola
343 MPF102 Trans JFET N-CH 25V 3-Pin TO-92 Bulk New Jersey Semiconductor
344 MPF102 Small Signal JFET N-Channel ON Semiconductor
345 MPF102-D JFET VHF Amplifier N-Channel - Depletion ON Semiconductor
346 MPF102RLRA JFET VHF Amplifier ON Semiconductor
347 MPF102_D27Z N-Channel RF Amplifier Fairchild Semiconductor
348 MPF102_D74Z N-Channel RF Amplifier Fairchild Semiconductor
349 MRF1029 1.5W 1GHz Linear UHF Power NPN silicon transistor Motorola
350 MURF1020CT 10 Amp Isolation Super Fast Recovery Rectifier 50 to 400 Volts Micro Commercial Components
351 PTF102027 40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
352 PTF102028 18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
353 Q62702-F102 NPN Silicon RF Transistor (Especially suitable for TV-sat and UHF tuners) Siemens
354 Q62702-F1020 Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) Siemens
355 Q62702-F1021 Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Siemens
356 Q62702-F1024 NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) Siemens
357 RD38F1020C0ZBL0 32-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 70ns Intel
358 RD38F1020C0ZTL0 32-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 70ns Intel
359 REF102 Precision VOLTAGE REFERENCE Burr Brown
360 REF102 Precision Voltage Reference Texas Instruments


Datasheets found :: 457
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |



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