| No. |
Part Name |
Description |
Manufacturer |
| 241 |
MGW21N60ED |
Insulated Gate Bipolar Transistor |
Motorola |
| 242 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 243 |
MGW30N60 |
Insulated Gate Bipolar Transistor |
Motorola |
| 244 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 245 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 246 |
MGY20N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 247 |
MGY25N120 |
Insulated Gate Bipolar Transistor |
Motorola |
| 248 |
MGY25N120 |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
| 249 |
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 250 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 251 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 252 |
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 253 |
MGY30N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 254 |
MGY40N60 |
Insulated Gate Bipolar Transistor |
Motorola |
| 255 |
MGY40N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 256 |
MM018-06L |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 257 |
MM118-06F |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 258 |
MM118-06L |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 259 |
MM118-XX |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 260 |
MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 261 |
MSAGA11F120D |
Insulated Gate Bipolar Transistor |
Microsemi |
| 262 |
MSAGX60F60A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 263 |
MSAGX75F60A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 264 |
MSAGX75L60A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 265 |
MSAGZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 266 |
MSAHX60F60A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 267 |
MSAHX75L60C |
Insulated Gate Bipolar Transistor |
Microsemi |
| 268 |
MSAHZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 269 |
NTE3300 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 270 |
NTE3301 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
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