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Datasheets for INSULATED GATE BIPOLAR TRANSISTOR

Datasheets found :: 283
Page: | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
271 NTE3302 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
272 NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
273 NTE3310 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
274 NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
275 NTE3312 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
276 NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
277 NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
278 NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
279 NTE3323 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch NTE Electronics
280 PPNGZ52F120A Insulated Gate Bipolar Transistor Microsemi
281 PPNHZ52F120A Insulated Gate Bipolar Transistor Microsemi
282 RGBC40M INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A) International Rectifier
283 ST1200FXF21 Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT High Power Switching Applications Motor Control Applications TOSHIBA


Datasheets found :: 283
Page: | 6 | 7 | 8 | 9 | 10 |



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