| No. |
Part Name |
Description |
Manufacturer |
| 271 |
NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 272 |
NTE3303 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 273 |
NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 274 |
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 275 |
NTE3312 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 276 |
NTE3320 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 277 |
NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 278 |
NTE3322 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 279 |
NTE3323 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 280 |
PPNGZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 281 |
PPNHZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 282 |
RGBC40M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A) |
International Rectifier |
| 283 |
ST1200FXF21 |
Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| | | |
