| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HR22-12WTPJ-20P |
HR22 SERIES HIGH-PERFORMANCE COMPACT CIRCULAR CONNECTORS |
Hirose Electric |
| 242 |
HR22-12WTPJ-20PC |
HR22 SERIES HIGH-PERFORMANCE COMPACT CIRCULAR CONNECTORS |
Hirose Electric |
| 243 |
HR22-12WTPJ-20S |
HR22 SERIES HIGH-PERFORMANCE COMPACT CIRCULAR CONNECTORS |
Hirose Electric |
| 244 |
HR22-12WTPJ-20SC |
HR22 SERIES HIGH-PERFORMANCE COMPACT CIRCULAR CONNECTORS |
Hirose Electric |
| 245 |
HR22-12WTRJ-20P |
HR22 SERIES HIGH-PERFORMANCE COMPACT CIRCULAR CONNECTORS |
Hirose Electric |
| 246 |
HR22-12WTRJ-20PC |
HR22 SERIES HIGH-PERFORMANCE COMPACT CIRCULAR CONNECTORS |
Hirose Electric |
| 247 |
HR22-12WTRJ-20S |
HR22 SERIES HIGH-PERFORMANCE COMPACT CIRCULAR CONNECTORS |
Hirose Electric |
| 248 |
HR22-12WTRJ-20SC |
HR22 SERIES HIGH-PERFORMANCE COMPACT CIRCULAR CONNECTORS |
Hirose Electric |
| 249 |
HR25-9J-20PC |
World Smallest Round Type Multiple Contact Connectors |
Hirose Electric |
| 250 |
HR25-9J-20SC |
World Smallest Round Type Multiple Contact Connectors |
Hirose Electric |
| 251 |
HR25-9TJ-20PC |
World Smallest Round Type Multiple Contact Connectors |
Hirose Electric |
| 252 |
HR25-9TJ-20SC |
World Smallest Round Type Multiple Contact Connectors |
Hirose Electric |
| 253 |
KM681002CJ-20 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 254 |
KM681002CLJ-20 |
128K x 8 high speed static RAM, 5V operating, 20ns, low power |
Samsung Electronic |
| 255 |
KM68257CJ-20 |
32Kx8 bit high speed static RAM (5V operating), 20ns |
Samsung Electronic |
| 256 |
KM68257CLJ-20 |
32Kx8 bit high speed static RAM (5V operating), 20ns |
Samsung Electronic |
| 257 |
KM75C104AHJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 258 |
KM75C104AJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 259 |
KM75C104ALJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
| 260 |
M5M5V1001CJ-20 |
20ns; active current: 100mA; V(cc): -0.3 to 7.0V; 1000mW; ROM: external; 16MHz; single-chip 16-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 261 |
M5M5V4R08J-20 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
| 262 |
MEM8129J-20 |
128K x 8-bit EEPROM, 200ns |
MSI Electronics |
| 263 |
MT5C1001DCJ-20L_883C |
1 meg x 4 SRAM memory array |
Austin Semiconductor |
| 264 |
MT5C1001DCJ-20L_IT |
1 meg x 4 SRAM memory array |
Austin Semiconductor |
| 265 |
MT5C1001DCJ-20L_XT |
1 meg x 4 SRAM memory array |
Austin Semiconductor |
| 266 |
MT5C1005DCJ-20L_883C |
256K x 4 SRAM memory array |
Austin Semiconductor |
| 267 |
MT5C1005DCJ-20L_IT |
256K x 4 SRAM memory array |
Austin Semiconductor |
| 268 |
MT5C1005DCJ-20L_XT |
256K x 4 SRAM memory array |
Austin Semiconductor |
| 269 |
MT5C1008DCJ-20/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
| 270 |
MT5C1008DCJ-20L/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
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