No. |
Part Name |
Description |
Manufacturer |
271 |
MT5C1008DCJ-20L_883C |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
272 |
MT5C1008DCJ-20L_IT |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
273 |
MT5C1008DCJ-20L_XT |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
274 |
MT5C1008SOJ-20/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
275 |
MT5C1008SOJ-20L/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
276 |
MT5C1009DCJ-20/883C |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE |
Austin Semiconductor |
277 |
MT5C1009DCJ-20L_883C |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
278 |
MT5C1009DCJ-20L_IT |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
279 |
MT5C1009DCJ-20L_XT |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
280 |
MT5C1009SOJ-20/883C |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE |
Austin Semiconductor |
281 |
MT5C1009SOJ-20L_883C |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
282 |
MT5C1009SOJ-20L_IT |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
283 |
MT5C1009SOJ-20L_XT |
128K x 8 SRAM with chip and output enable |
Austin Semiconductor |
284 |
NMC2116J-20 |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
285 |
NMC2116J-20L |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
286 |
PA7024J-20 |
Programmable Electrically Erasable Logic Array |
etc |
287 |
PA7024J-20 |
20ns programmable electrically erasable logic array |
ICT |
288 |
PA7128J-20 |
15ns programmable electrically erasable logic array |
ICT |
289 |
PA7140J-20 |
20ns programmable electrically erasable logic array |
ICT |
290 |
PA7572J-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
291 |
PA7572J-20 |
20ns programmable electrically erasable logic array |
ICT |
292 |
TC551664AJ-20 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
293 |
TC55328J-20 |
20ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
294 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
295 |
TC558128AJ-20 |
131,072-word by 8 bit CMOS static RAM, access time 20ns |
TOSHIBA |
296 |
TC55V1403J-20 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM |
TOSHIBA |
297 |
UPD30500RJ-200 |
VR5000TM, VR5000ATM, VR5000BTM 64-BIT MICROPROCESSOR |
NEC |
298 |
UPD70236AGJ-20-3EB |
16-BIT MICROPROCESSOR |
NEC |
299 |
W241024AJ-20 |
128L X 8 HIGH SPEED CMOS STATIC RAM |
Winbond Electronics |
300 |
W24257AJ-20 |
32K X 8 High Speed CMOS Static RAM |
Winbond Electronics |
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