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Datasheets for J-20

Datasheets found :: 313
Page: | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
271 MT5C1008DCJ-20L_883C 128K x 8 SRAM with dual chip enable Austin Semiconductor
272 MT5C1008DCJ-20L_IT 128K x 8 SRAM with dual chip enable Austin Semiconductor
273 MT5C1008DCJ-20L_XT 128K x 8 SRAM with dual chip enable Austin Semiconductor
274 MT5C1008SOJ-20/883C 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS Advanced Semiconductor
275 MT5C1008SOJ-20L/883C 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS Advanced Semiconductor
276 MT5C1009DCJ-20/883C 128K x 8 SRAM WITH CHIP & OUTPUT ENABLE Austin Semiconductor
277 MT5C1009DCJ-20L_883C 128K x 8 SRAM with chip and output enable Austin Semiconductor
278 MT5C1009DCJ-20L_IT 128K x 8 SRAM with chip and output enable Austin Semiconductor
279 MT5C1009DCJ-20L_XT 128K x 8 SRAM with chip and output enable Austin Semiconductor
280 MT5C1009SOJ-20/883C 128K x 8 SRAM WITH CHIP & OUTPUT ENABLE Austin Semiconductor
281 MT5C1009SOJ-20L_883C 128K x 8 SRAM with chip and output enable Austin Semiconductor
282 MT5C1009SOJ-20L_IT 128K x 8 SRAM with chip and output enable Austin Semiconductor
283 MT5C1009SOJ-20L_XT 128K x 8 SRAM with chip and output enable Austin Semiconductor
284 NMC2116J-20 200 ns, 5 V, 1 W, 2048 x 8 static RAM National Semiconductor
285 NMC2116J-20L 200 ns, 5 V, 1 W, 2048 x 8 static RAM National Semiconductor
286 PA7024J-20 Programmable Electrically Erasable Logic Array etc
287 PA7024J-20 20ns programmable electrically erasable logic array ICT
288 PA7128J-20 15ns programmable electrically erasable logic array ICT
289 PA7140J-20 20ns programmable electrically erasable logic array ICT
290 PA7572J-20 4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array Anachip
291 PA7572J-20 20ns programmable electrically erasable logic array ICT
292 TC551664AJ-20 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
293 TC55328J-20 20ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM TOSHIBA
294 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
295 TC558128AJ-20 131,072-word by 8 bit CMOS static RAM, access time 20ns TOSHIBA
296 TC55V1403J-20 4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM TOSHIBA
297 UPD30500RJ-200 VR5000TM, VR5000ATM, VR5000BTM 64-BIT MICROPROCESSOR NEC
298 UPD70236AGJ-20-3EB 16-BIT MICROPROCESSOR NEC
299 W241024AJ-20 128L X 8 HIGH SPEED CMOS STATIC RAM Winbond Electronics
300 W24257AJ-20 32K X 8 High Speed CMOS Static RAM Winbond Electronics


Datasheets found :: 313
Page: | 6 | 7 | 8 | 9 | 10 | 11 |



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