| No. |
Part Name |
Description |
Manufacturer |
| 241 |
GT10J321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
TOSHIBA |
| 242 |
GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 243 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 244 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 245 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 246 |
GT35J321 |
IGBT for soft switching applications |
TOSHIBA |
| 247 |
GT40J321 |
IGBT for soft switching applications |
TOSHIBA |
| 248 |
GT40J322 |
IGBT for soft switching applications |
TOSHIBA |
| 249 |
GT40J325 |
IGBT for soft switching applications |
TOSHIBA |
| 250 |
GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 251 |
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 252 |
GT50J328 |
Discrete IGBT |
TOSHIBA |
| 253 |
GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
| 254 |
GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
| 255 |
GT60J323 |
IGBT for soft switching applications |
TOSHIBA |
| 256 |
GT60J323H |
Discrete IGBT |
TOSHIBA |
| 257 |
HJ32C |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 258 |
HLMP-DJ32 |
T-13/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps |
Agilent (Hewlett-Packard) |
| 259 |
HLMP-EJ32 |
T-1 (5mm) Precision Optical Performance AlInGaP LED Lamps |
Agilent (Hewlett-Packard) |
| 260 |
HLMP-EJ32-NR000 |
HLMP-EJ32-NR000 · T-1 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps |
Agilent (Hewlett-Packard) |
| 261 |
HLMP-EJ32-NR000 |
HLMP-EJ32-NR000 · T-1 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps |
Agilent (Hewlett-Packard) |
| 262 |
HLMP-EJ32-PS000 |
HLMP-EJ32-PS000 · T-1 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps |
Agilent (Hewlett-Packard) |
| 263 |
HLMP-EJ32-PS000 |
HLMP-EJ32-PS000 · T-1 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps |
Agilent (Hewlett-Packard) |
| 264 |
HLMP-GJ32 |
T-13/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps |
Agilent (Hewlett-Packard) |
| 265 |
IRHMJ3250 |
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package |
International Rectifier |
| 266 |
IRKJ320-04 |
400V Common Anode in a MAGN-A-Pak package |
International Rectifier |
| 267 |
IRKJ320-08 |
800V Common Anode in a MAGN-A-Pak package |
International Rectifier |
| 268 |
IRKJ320-12 |
1200V Common Anode in a MAGN-A-Pak package |
International Rectifier |
| 269 |
IRKJ320-16 |
1600V Common Anode in a MAGN-A-Pak package |
International Rectifier |
| 270 |
IRKJ320-20 |
2000V Common Anode in a MAGN-A-Pak package |
International Rectifier |
| | | |
