| No. |
Part Name |
Description |
Manufacturer |
| 271 |
IXFJ32N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 272 |
J32AQ |
32 Lead Ceramic Dual-in-Line Package, EPROM |
National Semiconductor |
| 273 |
J32B |
32 Lead Ceramic Dual-in-Line Package |
National Semiconductor |
| 274 |
J32C |
Mini size of Discrete semiconductor elements |
SINYORK |
| 275 |
K7J321882M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM |
Samsung Electronic |
| 276 |
K7J323682M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM |
Samsung Electronic |
| 277 |
LD3985J32R |
ULTRA LOW DROP-LOW NOISE BICMOS VOLTAGE REGULATORS LOW ESR CAPACITORS COMPATIBLE |
SGS Thomson Microelectronics |
| 278 |
LJ320U27 |
EL Display Module |
SHARP |
| 279 |
LJ32H028 |
EL Display Module |
SHARP |
| 280 |
LNJ324C43RA |
Opto Electronic Devices |
Panasonic |
| 281 |
LNJ326W83RA |
Surface-mount LEDs |
Panasonic |
| 282 |
LNJ326W83RA1 |
Surface-mount LEDs |
Panasonic |
| 283 |
LNJ328W83RA |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 284 |
MJ3201 |
High-voltage NPN silicon transistor designed for use in line-operated equipment |
Motorola |
| 285 |
MJ3201 |
Silicon NPN Power Transistor, TO-66 (cont d) package |
Silicon Transistor Corporation |
| 286 |
MJ3202 |
High-voltage NPN silicon transistor designed for use in line-operated equipment |
Motorola |
| 287 |
MJ3202 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 288 |
MJ3202 |
Silicon NPN Power Transistor, TO-66 (cont d) package |
Silicon Transistor Corporation |
| 289 |
MJ3202A |
Complementary NPN-PNP silicon power bipolar transistor |
Motorola |
| 290 |
MJ3260 |
Horizontal Deflection Silicon NPN 6A Power Transistor 700V 80W |
Motorola |
| 291 |
MJ3281A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS |
Motorola |
| 292 |
MJ3281A |
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR |
Motorola |
| 293 |
NX8560LJ326-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1532.68 nm. Frequency 195.60 THz. FC-UPC connector. |
NEC |
| 294 |
NX8560LJ326-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1532.68 nm. Frequency 195.60 THz. SC-UPC connector. |
NEC |
| 295 |
NX8560SJ322-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1532.290 nm. Frequency 195.65 THz. FC-UPC connector. |
NEC |
| 296 |
NX8560SJ322-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1532.290 nm. Frequency 195.65 THz. SC-UPC connector. |
NEC |
| 297 |
NX8560SJ326-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1532.681 nm. Frequency 195.60 THz. FC-UPC connector. |
NEC |
| 298 |
NX8560SJ326-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1532.681 nm. Frequency 195.60 THz. SC-UPC connector. |
NEC |
| 299 |
PIC24FJ32GA002 |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| 300 |
PIC24FJ32GA002-E/ML |
16-Bit - Microcontrollers and Digital Signal Controllers |
Microchip |
| | | |
