No. |
Part Name |
Description |
Manufacturer |
241 |
2W10 |
SINGLE PHASE 2.0 AMP SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
242 |
2W10 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
243 |
2W10M |
SINGLE PHASE 2.0 AMPS. SILICON BRIDGE RECTIFIERS |
Surge Components |
244 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
245 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
246 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
247 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
248 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
249 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
250 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
251 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
252 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
253 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
254 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
255 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
256 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
257 |
50 OHMS 50 OHMS OHMIC ADDED 9-4-92 OHMIC |
33�43 GHz GaAs MMIC Image Rejection Balanced Mixer |
Alpha Industries Inc |
258 |
54F |
Up/Down Binary Counter with Separate Up/Down Clocks |
National Semiconductor |
259 |
54F191 |
Up/Down Binary Counter With Preset and Ripple Clock |
Fairchild Semiconductor |
260 |
54F191 |
Up/Down Binary Counter with Preset and Ripple Clock |
National Semiconductor |
261 |
54F191DM |
Up/Down Binary Counter with Preset and Ripple Clock |
National Semiconductor |
262 |
54F191FM |
Up/Down Binary Counter with Preset and Ripple Clock |
National Semiconductor |
263 |
54F191FMQB |
Up/Down Binary Counter with Preset and Ripple Clock |
National Semiconductor |
264 |
54F191FMQB |
Up/Down Binary Counter with Preset and Ripple Clock |
National Semiconductor |
265 |
54F191LM |
Up/Down Binary Counter with Preset and Ripple Clock |
National Semiconductor |
266 |
54F191LMQB |
Up/Down Binary Counter with Preset and Ripple Clock |
National Semiconductor |
267 |
54F191LMQB |
Up/Down Binary Counter with Preset and Ripple Clock |
National Semiconductor |
268 |
54F193 |
Up/Down Binary Counter With Separate Up/Down Clocks |
Fairchild Semiconductor |
269 |
54F193 |
Up/Down Binary Counter with Separate Up/Down Clocks |
National Semiconductor |
270 |
54F193DC |
Up/Down Binary Counter with Separate Up/Down Clocks |
National Semiconductor |
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