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Datasheets for N B

Datasheets found :: 18412
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No. Part Name Description Manufacturer
151 2N5445 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
152 2N5446 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
153 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
154 2N5551HRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
155 2N5551HRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
156 2N5551RHRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
157 2N5551RHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
158 2N5551RUBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
159 2N5551RUBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
160 2N5551SHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
161 2N5551UB1 Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
162 2N5551UBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
163 2N5551UBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
164 2N5571 SILICON BIDIRECTIOANAL TRIODE THYRISTORS Motorola
165 2N5572 SILICON BIDIRECTIOANAL TRIODE THYRISTORS Motorola
166 2N5573 SILICON BIDIRECTIOANAL TRIODE THYRISTORS Motorola
167 2N5574 SILICON BIDIRECTIOANAL TRIODE THYRISTORS Motorola
168 2N5664SMD NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS SemeLAB
169 2N5681SMD 100V Vce, 1A Ic, 30MHz NPN bipolar transistor SemeLAB
170 2N5916 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
171 2N5917 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
172 2N6071 Silicon Bidirectional Thyristor 4A 200V Motorola
173 2N6071-D Sensitive Gate Triacs Silicon Bidirectional Thyristors ON Semiconductor
174 2N6071A Silicon Bidirectional Thyristor 4A 200V Motorola
175 2N6071B Silicon Bidirectional Thyristor 4A 200V Motorola
176 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
177 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
178 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
179 2N6073 Silicon Bidirectional Thyristor 4A 400V Motorola
180 2N6073 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. Motorola


Datasheets found :: 18412
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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