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Datasheets for N B

Datasheets found :: 18412
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No. Part Name Description Manufacturer
31 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
32 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
33 1416-100 100 W, 50 V, 1400-1600 MHz common base transistor GHz Technology
34 1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
35 1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
36 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
37 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
38 1417-12A 12 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
39 1417-6A 6 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
40 1516-35 35 W, 28 V, 1450-1550 MHz common base transistor GHz Technology
41 1618-35 35 W, 28 V, 1600-1800 MHz common base transistor GHz Technology
42 1718-32L 32 W, 24 V, 1750-1850 MHz common base transistor GHz Technology
43 1719-2 2 W, 2 V, 1700-1900 MHz common base transistor GHz Technology
44 1719-20 20 W, 28 V, 1700-1900 MHz common base transistor GHz Technology
45 1719-35 35 W, 28 V, 1725-1850 MHz common base transistor GHz Technology
46 1719-8 8 W, 28 V, 1700-1900 MHz common base transistor GHz Technology
47 1819-35 35 W, 28 V, 1750-1850 MHz common base transistor GHz Technology
48 1N6317US Diode Zener Single 5.1V 5% 500mW 2-Pin B-MELF New Jersey Semiconductor
49 1N6320US Diode Zener Single 6.8V 5% 500mW 2-Pin B-MELF New Jersey Semiconductor
50 1N6328US Diode Zener Single 15V 5% 500mW 2-Pin B-MELF New Jersey Semiconductor
51 1W005 SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
52 1W01 SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
53 1W010 Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. Jinan Gude Electronic Device
54 1W02 SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
55 1W04 SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
56 1W06 SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
57 1W08 SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
58 1W10 SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS Jinan Gude Electronic Device
59 2001 1 W, 28 V, 2000 MHz common base transistor GHz Technology
60 2003 3 W, 28 V, 2000 MHz common base transistor GHz Technology


Datasheets found :: 18412
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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