| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1N5523D |
Diode Zener Single 5.1V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 242 |
1N5523D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 243 |
1N5523D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 244 |
1N5523DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 245 |
1N5523DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 246 |
1N5524 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 247 |
1N5524 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 248 |
1N5524 |
Low Voltage Avalanche Zener |
Microsemi |
| 249 |
1N5524 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±20% tolerance |
Motorola |
| 250 |
1N5524 |
Diode Zener Single 5.6V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 251 |
1N5524A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 252 |
1N5524A |
Low Voltage Avalanche Zener |
Microsemi |
| 253 |
1N5524A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±10% tolerance |
Motorola |
| 254 |
1N5524A |
Diode Zener Single 5.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 255 |
1N5524A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 256 |
1N5524A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 257 |
1N5524AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 258 |
1N5524AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 259 |
1N5524B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 260 |
1N5524B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 261 |
1N5524B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 262 |
1N5524B |
Low Voltage Avalanche Zener |
Microsemi |
| 263 |
1N5524B |
Low Voltage Avalanche Zener |
Microsemi |
| 264 |
1N5524B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±5% tolerance |
Motorola |
| 265 |
1N5524B |
Diode Zener Single 5.6V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 266 |
1N5524B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 267 |
1N5524B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 268 |
1N5524B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 269 |
1N5524B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 270 |
1N5524BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
