| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 242 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 243 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 244 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 245 |
2N3904 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 246 |
2N3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 247 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 248 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 249 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 250 |
2N3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 251 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 252 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 253 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 254 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 255 |
2N3930 |
High voltage amplifier transistor |
SGS-ATES |
| 256 |
2N3931 |
High voltage amplifier transistor |
SGS-ATES |
| 257 |
2N3946 |
NPN Small Signal General Purpose Amplifier & Switch |
Fairchild Semiconductor |
| 258 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
| 259 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 260 |
2N3962 |
Low level amplifier transistor |
SGS-ATES |
| 261 |
2N3963 |
Low level amplifier transistor |
SGS-ATES |
| 262 |
2N3964 |
Low level amplifier transistor |
SGS-ATES |
| 263 |
2N3965 |
Low level amplifier transistor |
SGS-ATES |
| 264 |
2N4033 |
GENERAL PURPOSE AMPLIFIER AND SWITCH |
SGS Thomson Microelectronics |
| 265 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 266 |
2N4124 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 267 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 268 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 269 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 270 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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