| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 332 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 333 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 334 |
2N5210RLRA |
Amplifier Transistor NPN |
ON Semiconductor |
| 335 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 336 |
2N5221 |
Low-Power General purpose PNP silicon amplifier transistor |
ITT Semiconductors |
| 337 |
2N5223 |
NPN Small Signal General Purpose Amplifier & Oscillator |
Fairchild Semiconductor |
| 338 |
2N5223 |
Low-Level General purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 339 |
2N5225 |
NPN-PNP small signal general purpose complementary amplifier . |
Fairchild Semiconductor |
| 340 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
| 341 |
2N5226 |
NPN-PNP small signal general purpose complementary amplifier . |
Fairchild Semiconductor |
| 342 |
2N5226 |
Medium Power PNP Silicon Amplifier transistor |
ITT Semiconductors |
| 343 |
2N5227 |
PNP small signal general purpose amplifier & oscillator. |
Fairchild Semiconductor |
| 344 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
| 345 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 346 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 347 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 348 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 349 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 350 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 351 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 352 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 353 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 354 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 355 |
2N5400 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
| 356 |
2N5400 |
Amplifier Transistor(PNP Silicon) |
ON Semiconductor |
| 357 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 358 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 359 |
2N5400RLRA |
Amplifier Transistor PNP |
ON Semiconductor |
| 360 |
2N5400RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
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