| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 452 |
2N760A |
Low level amplifier transistor |
SGS-ATES |
| 453 |
2N910 |
Low level amplifier transistor |
SGS-ATES |
| 454 |
2N911 |
Low level amplifier transistor |
SGS-ATES |
| 455 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 456 |
2N929 |
Low level amplifier transistor |
SGS-ATES |
| 457 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 458 |
2N930 |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 459 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 460 |
2N930 |
Low level amplifier transistor |
SGS-ATES |
| 461 |
2N930A |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 462 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 463 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 464 |
2N998 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 465 |
2N999 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 466 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 467 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 468 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 469 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 470 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 471 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 472 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 473 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 474 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 475 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
| 476 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 477 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 478 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 479 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
| 480 |
2SA1048L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| | | |
