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Datasheets for R-E

Datasheets found :: 2208
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No. Part Name Description Manufacturer
241 AZV358GTR-E1 DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS Diodes
242 AZV358MMTR-E1 DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS Diodes
243 AZV358MTR-E1 DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS Diodes
244 AZV393GTR-E1 DUAL GENERAL PURPOSE LOW VOLTAGE COMPARATOR Diodes
245 AZV393MMTR-E1 DUAL GENERAL PURPOSE LOW VOLTAGE COMPARATOR Diodes
246 AZV393MTR-E1 DUAL GENERAL PURPOSE LOW VOLTAGE COMPARATOR Diodes
247 BC107 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
248 BC107A NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 SGS Thomson Microelectronics
249 BC107B NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
250 BC108 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
251 BC108A NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 SGS Thomson Microelectronics
252 BC108B NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
253 BC108C NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 SGS Thomson Microelectronics
254 BC109 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
255 BC109B NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
256 BC109C NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 SGS Thomson Microelectronics
257 BC170 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
258 BC171 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
259 BC172 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
260 BC173 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
261 BC174 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
262 BC177 Silicon planar-epitaxial transistor, low frequency, low power PNP IPRS Baneasa
263 BC178 Silicon planar-epitaxial transistor, low frequency, low power PNP IPRS Baneasa
264 BC179 Silicon planar-epitaxial transistor, low frequency, low power PNP IPRS Baneasa
265 BC190 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
266 BC237 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
267 BC237 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
268 BC238 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
269 BC238 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
270 BC239 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa


Datasheets found :: 2208
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