No. |
Part Name |
Description |
Manufacturer |
241 |
AZV358GTR-E1 |
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS |
Diodes |
242 |
AZV358MMTR-E1 |
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS |
Diodes |
243 |
AZV358MTR-E1 |
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS |
Diodes |
244 |
AZV393GTR-E1 |
DUAL GENERAL PURPOSE LOW VOLTAGE COMPARATOR |
Diodes |
245 |
AZV393MMTR-E1 |
DUAL GENERAL PURPOSE LOW VOLTAGE COMPARATOR |
Diodes |
246 |
AZV393MTR-E1 |
DUAL GENERAL PURPOSE LOW VOLTAGE COMPARATOR |
Diodes |
247 |
BC107 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
248 |
BC107A |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
249 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
250 |
BC108 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
251 |
BC108A |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
252 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
253 |
BC108C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
254 |
BC109 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
255 |
BC109B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
256 |
BC109C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
257 |
BC170 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
258 |
BC171 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
259 |
BC172 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
260 |
BC173 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
261 |
BC174 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
262 |
BC177 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
263 |
BC178 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
264 |
BC179 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
265 |
BC190 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
266 |
BC237 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
267 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
268 |
BC238 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
269 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
270 |
BC239 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
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