| No. |
Part Name |
Description |
Manufacturer |
| 271 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 272 |
BC250 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
| 273 |
BC251 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
| 274 |
BC252 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
| 275 |
BC253 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
| 276 |
BC256 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
| 277 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 278 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 279 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 280 |
BC327 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
| 281 |
BC327 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 282 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 283 |
BC327-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 284 |
BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 285 |
BC327-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 286 |
BC328 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
| 287 |
BC328 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 288 |
BC328-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 289 |
BC328-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 290 |
BC328-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 291 |
BC337 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 292 |
BC337 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 293 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 294 |
BC337-16 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 295 |
BC337-25 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 296 |
BC337-40 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 297 |
BC338 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 298 |
BC338 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 299 |
BC338-16 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 300 |
BC338-25 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
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