| No. |
Part Name |
Description |
Manufacturer |
| 241 |
LS656AD1 |
Telephone speech circuit with multifrequency tone generator interface |
SGS Thomson Microelectronics |
| 242 |
LS656B |
Telephone speech circuit with multifrequency tone generator interface |
SGS Thomson Microelectronics |
| 243 |
LS656B |
TELEPHONE SPEECH CIRCUIT WITH MULTIFREQUENCY TONE GENERATOR INTERFACE |
ST Microelectronics |
| 244 |
LT3S65W |
�3mm(T-1), Cylinder Type(Thick Flange), Colored Transparency, Tape-packaged LED Lamps for Surface Mount |
SHARP |
| 245 |
M464S6554BTS |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
| 246 |
M464S6554BTS-C7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
| 247 |
M464S6554BTS-CL7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
| 248 |
M464S6554BTS-L |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
| 249 |
M464S6554BTS-L7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
| 250 |
M464S6554MTS |
64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 251 |
MB81ES653225 |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
| 252 |
MB81ES653225-12 |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
| 253 |
MB81ES653225-12L |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
| 254 |
MC100ES6535 |
3.3V LVCMOS to LVPECL 1:4 Fanout Buffer |
Freescale (Motorola) |
| 255 |
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 256 |
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 257 |
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 258 |
MG300Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 259 |
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 260 |
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 261 |
MN103S65G |
Microcomputer - 32bit - General Purpose |
Panasonic |
| 262 |
MPS650 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 263 |
MPS650 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 2.000A Ic, 75 - hFE |
Continental Device India Limited |
| 264 |
MPS650 |
Amplifier Transistors |
Motorola |
| 265 |
MPS650 |
Trans GP BJT NPN 40V 2A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 266 |
MPS650 |
Small Signal High Current NPN |
ON Semiconductor |
| 267 |
MPS650-D |
Amplifier Transistors |
ON Semiconductor |
| 268 |
MPS6507 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 269 |
MPS6507 |
NPN silicon transistor designed as a VHF mixer in TV applications |
Motorola |
| 270 |
MPS6507 |
Amplifier Transistor |
Motorola |
| | | |
