No. |
Part Name |
Description |
Manufacturer |
271 |
LS656B |
TELEPHONE SPEECH CIRCUIT WITH MULTIFREQUENCY TONE GENERATOR INTERFACE |
ST Microelectronics |
272 |
LT3S65W |
�3mm(T-1), Cylinder Type(Thick Flange), Colored Transparency, Tape-packaged LED Lamps for Surface Mount |
SHARP |
273 |
M464S6554BTS |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
274 |
M464S6554BTS-C7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
275 |
M464S6554BTS-CL7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
276 |
M464S6554BTS-L |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
277 |
M464S6554BTS-L7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
278 |
M464S6554MTS |
64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
279 |
MB81ES653225 |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
280 |
MB81ES653225-12 |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
281 |
MB81ES653225-12L |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
282 |
MC100ES6535 |
3.3V LVCMOS to LVPECL 1:4 Fanout Buffer |
Freescale (Motorola) |
283 |
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
284 |
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
285 |
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
286 |
MG300Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
287 |
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
288 |
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
289 |
MN103S65G |
Microcomputer - 32bit - General Purpose |
Panasonic |
290 |
MPS650 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
291 |
MPS650 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 2.000A Ic, 75 - hFE |
Continental Device India Limited |
292 |
MPS650 |
Amplifier transistor NPN silicon |
Motorola |
293 |
MPS650 |
Amplifier Transistors |
Motorola |
294 |
MPS650 |
Trans GP BJT NPN 40V 2A 3-Pin TO-92 Box |
New Jersey Semiconductor |
295 |
MPS650 |
Small Signal High Current NPN |
ON Semiconductor |
296 |
MPS650-D |
Amplifier Transistors |
ON Semiconductor |
297 |
MPS6507 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
298 |
MPS6507 |
NPN silicon transistor designed as a VHF mixer in TV applications |
Motorola |
299 |
MPS6507 |
Amplifier Transistor |
Motorola |
300 |
MPS6507 |
NPN VHF/UHF Oscillator Transistor |
National Semiconductor |
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