| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N3501 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 242 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 243 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 244 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 245 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 246 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 247 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 248 |
2N3771 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 249 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 250 |
2N3772 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 251 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 252 |
2N3773 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 253 |
2N3821 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 254 |
2N3822 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 255 |
2N3823 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 256 |
2N3824 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 257 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 258 |
2N3867 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
| 259 |
2N3868 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
| 260 |
2N3966 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 261 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 262 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 263 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 264 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 265 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 266 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 267 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 268 |
2N4091 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 269 |
2N4091A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 270 |
2N4092 |
N channel field effect transistor (metal can) |
SESCOSEM |
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