| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3055/3 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 212 |
2N3055/4 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 213 |
2N3055/5 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 214 |
2N3055/6 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 215 |
2N3055/7 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 216 |
2N3055/8 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 217 |
2N3055/9 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 218 |
2N3055E |
Silicon epitaxial-base NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 219 |
2N3055H |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 220 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 221 |
2N3055W |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 222 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 223 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 224 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 225 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 226 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 227 |
2N3439 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 228 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 229 |
2N3440 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 230 |
2N3441 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 231 |
2N3442 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 232 |
2N3442 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 233 |
2N3458 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 234 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 235 |
2N3496 |
0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 236 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 237 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 238 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
| 239 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
| 240 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
| | | |
