| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N3039B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 92 |
1N3040B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 93 |
1N3041B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 94 |
1N3042B |
Silicon zener diode 82V 1W metal case |
IPRS Baneasa |
| 95 |
1N3043B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 96 |
1N3044B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 97 |
1N3045B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 98 |
1N3046B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 99 |
1N3047B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 100 |
1N3048B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 101 |
1N3049B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 102 |
1N3050B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 103 |
1N3051B |
Silicon zener diode 1W metal case |
IPRS Baneasa |
| 104 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
| 105 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
| 106 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
| 107 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
| 108 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
| 109 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| 110 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 111 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 112 |
2N1302 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 113 |
2N1303 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 114 |
2N1304 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 115 |
2N1305 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 116 |
2N1306 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 117 |
2N1307 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 118 |
2N1308 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 119 |
2N1309 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 120 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
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