| No. |
Part Name |
Description |
Manufacturer |
| 2431 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 2432 |
2SC2538 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2433 |
2SC2539 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2434 |
2SC2540 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2435 |
2SC2543 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2436 |
2SC2544 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2437 |
2SC2545 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2438 |
2SC2546 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2439 |
2SC2547 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2440 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
| 2441 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 2442 |
2SC2561 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 2443 |
2SC2562 |
Silicon NPN epitaxial high-current switching transistor |
TOSHIBA |
| 2444 |
2SC2563 |
Silicon NPN epitaxial audio frequency power transistor |
TOSHIBA |
| 2445 |
2SC2564 |
Silicon NPN epitaxial power transistor, complementary to 2SA1094 |
TOSHIBA |
| 2446 |
2SC2565 |
Silicon NPN epitaxial power transistor, complementary to 2SA1095 |
TOSHIBA |
| 2447 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2448 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2449 |
2SC2591 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 2450 |
2SC2592 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 2451 |
2SC2609 |
NPN epitaxial planar RF power VHF transistor 100W 28V |
Mitsubishi Electric Corporation |
| 2452 |
2SC2618 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2453 |
2SC2619 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2454 |
2SC2620 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 2455 |
2SC2633 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 2456 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
| 2457 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 2458 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2459 |
2SC2668 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, IF Amplifier Applications |
TOSHIBA |
| 2460 |
2SC2669 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
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