| No. |
Part Name |
Description |
Manufacturer |
| 2551 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 2552 |
2SC3012 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| 2553 |
2SC3012 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| 2554 |
2SC3017 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2555 |
2SC3018 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2556 |
2SC3019 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2557 |
2SC3020 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2558 |
2SC3021 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2559 |
2SC3022 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2560 |
2SC3039 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 2561 |
2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2562 |
2SC3064 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
| 2563 |
2SC3065 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
| 2564 |
2SC3067 |
NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONS |
SANYO |
| 2565 |
2SC3068 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2566 |
2SC3069 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2567 |
2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2568 |
2SC3071 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2569 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 2570 |
2SC3073 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 2571 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 2572 |
2SC3076 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2573 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 2574 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 2575 |
2SC3101 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2576 |
2SC3102 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2577 |
2SC3103 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2578 |
2SC3104 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2579 |
2SC3105 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2580 |
2SC3110 |
Si NPN epitaxial planar. RF wide band low-noise amplifier. |
Panasonic |
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