No. |
Part Name |
Description |
Manufacturer |
2461 |
2N5879 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5881 |
Silicon Transistor Corporation |
2462 |
2N5880 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5882 |
Silicon Transistor Corporation |
2463 |
2N5881 |
Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N5879 |
Silicon Transistor Corporation |
2464 |
2N5882 |
Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N5880 |
Silicon Transistor Corporation |
2465 |
2N5883 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5885 |
Silicon Transistor Corporation |
2466 |
2N5884 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5886 |
Silicon Transistor Corporation |
2467 |
2N5885 |
Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N5883 |
Silicon Transistor Corporation |
2468 |
2N5886 |
Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N5884 |
Silicon Transistor Corporation |
2469 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
2470 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
2471 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
2472 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
2473 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
2474 |
2N5954 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N6374 |
Silicon Transistor Corporation |
2475 |
2N5955 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N6373 |
Silicon Transistor Corporation |
2476 |
2N5956 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N6372 |
Silicon Transistor Corporation |
2477 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
2478 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
2479 |
2N6049 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N3054A |
Silicon Transistor Corporation |
2480 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
2481 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
2482 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
2483 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
2484 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
2485 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
2486 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
2487 |
2N6108 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
2488 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
2489 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
2490 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
| | | |