No. |
Part Name |
Description |
Manufacturer |
2491 |
2N6110 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
2492 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
2493 |
2N6111 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
2494 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
2495 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
2496 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
2497 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
2498 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
2499 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
2500 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
2501 |
2N6211 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
2502 |
2N6211 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N3583 |
Silicon Transistor Corporation |
2503 |
2N6212 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
2504 |
2N6212 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N3584 |
Silicon Transistor Corporation |
2505 |
2N6213 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
2506 |
2N6213 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N3585 |
Silicon Transistor Corporation |
2507 |
2N6214 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
2508 |
2N6229 |
10A complementary silicon high-voltage, high-power PNP transistor 150W |
Motorola |
2509 |
2N6230 |
10A complementary silicon high-voltage, high-power PNP transistor 150W |
Motorola |
2510 |
2N6231 |
10A complementary silicon high-voltage, high-power PNP transistor 150W |
Motorola |
2511 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
2512 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
2513 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
2514 |
2N6253 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
2515 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
2516 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
2517 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
2518 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
2519 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
2520 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
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