| No. |
Part Name |
Description |
Manufacturer |
| 2461 |
MD50600 |
600 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2462 |
MD50800 |
800 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2463 |
MDL50050 |
50 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2464 |
MDL50100 |
100 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2465 |
MDL501000 |
1000 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2466 |
MDL50200 |
200 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2467 |
MDL50400 |
400 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2468 |
MDL50600 |
600 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2469 |
MDL50800 |
800 V, 50 A, rectifier automotive diode |
TRANSYS Electronics Limited |
| 2470 |
MF6CJ-100 |
5 V to 14 V, 500 mW, 6-th order switched capacitor butterworth lowpass filter |
National Semiconductor |
| 2471 |
MF6CN-100 |
5 V to 14 V, 500 mW, 6-th order switched capacitor butterworth lowpass filter |
National Semiconductor |
| 2472 |
MJ10044 |
NPN silicon power darlington transistor. 450 V, 50 A, 250 W. |
Motorola |
| 2473 |
MJ10045 |
NPN silicon power darlington transistor. 450 V, 50 A, 250 W. |
Motorola |
| 2474 |
MJ13070 |
NPN silicon power transistor. 400 V, 5 A, 125 W. |
Motorola |
| 2475 |
MJ13071 |
NPN silicon power transistor. 450 V, 5 A, 125 W. |
Motorola |
| 2476 |
MJD122-1 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 2477 |
MJD122T4 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 2478 |
MJD127-1 |
PNP darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 2479 |
MJD127T4 |
PNP darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 2480 |
MJE13070 |
NPN silicon power silicon transistor. 400 V, 5 A, 80 W. |
Motorola |
| 2481 |
MJE13071 |
NPN silicon power silicon transistor. 450 V, 5 A, 80 W. |
Motorola |
| 2482 |
MJE200 |
40 V, 5 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2483 |
MJE340 |
300 V, 500 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2484 |
MJE800 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 2485 |
MJE801 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 2486 |
MJE802 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 2487 |
MJE803 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 2488 |
MMBT5087 |
50 V, 50 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2489 |
MMBT5088 |
35 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2490 |
MMBT5089 |
30 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
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