No. |
Part Name |
Description |
Manufacturer |
2491 |
MMBT6427 |
40 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2492 |
MOC3020 |
6V, 50mA optically coupled bilateral switch non-zero crossing triac |
ISOCOM |
2493 |
MOC3021 |
6V, 50mA optically coupled bilateral switch non-zero crossing triac |
ISOCOM |
2494 |
MOC3022 |
6V, 50mA optically coupled bilateral switch non-zero crossing triac |
ISOCOM |
2495 |
MOC3023 |
6V, 50mA optically coupled bilateral switch non-zero crossing triac |
ISOCOM |
2496 |
MOC3061 |
6V, 50mA optically coupled bilateral switch light activated zero voltage crossing triac |
ISOCOM |
2497 |
MOC3062 |
6V, 50mA optically coupled bilateral switch light activated zero voltage crossing triac |
ISOCOM |
2498 |
MOC3063 |
6V, 50mA optically coupled bilateral switch light activated zero voltage crossing triac |
ISOCOM |
2499 |
MPA201 |
0.5 W, 12.5 V, 500 MHz common emitter transistor |
GHz Technology |
2500 |
MPS5179 |
20 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2501 |
MPS6560 |
25 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2502 |
MPS6562 |
25 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2503 |
MPS8098 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2504 |
MPS8099 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2505 |
MPS8598 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2506 |
MPS8599 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2507 |
MR820 |
50 V, 5 A glass passivated fast recovery rectifier |
Fagor |
2508 |
MR821 |
100 V, 5 A glass passivated fast recovery rectifier |
Fagor |
2509 |
MR822 |
200 V, 5 A glass passivated fast recovery rectifier |
Fagor |
2510 |
MR824 |
400 V, 5 A glass passivated fast recovery rectifier |
Fagor |
2511 |
MR826 |
600 V, 5 A glass passivated fast recovery rectifier |
Fagor |
2512 |
MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET |
Motorola |
2513 |
MRF275G |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET |
Motorola |
2514 |
MSK4351D |
500 V, 50A, smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
2515 |
MSK4351ED |
500 V, 50A, smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
2516 |
MSK4351ES |
500 V, 50A, smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
2517 |
MSK4351EU |
500 V, 50A, smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
2518 |
MSK4351HU |
500 V, 50A, smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
2519 |
MSK4351S |
500 V, 50A, smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
2520 |
MSK4351U |
500 V, 50A, smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
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