| No. |
Part Name |
Description |
Manufacturer |
| 2491 |
PHPT61003NY |
100 V, 3 A NPN high power bipolar transistor |
Nexperia |
| 2492 |
PHPT61003PY |
100 V, 3A PNP high power bipolar transistor |
Nexperia |
| 2493 |
PHPT61006NY |
100 V, 6 A NPN high power bipolar transistor |
Nexperia |
| 2494 |
PHPT61006PY |
100 V, 6 A PNP high power bipolar transistor |
Nexperia |
| 2495 |
PHPT61010NY |
100 V, 10 A NPN high power bipolar transistor |
Nexperia |
| 2496 |
PHPT61010PY |
100 V, 10 A PNP high power bipolar transistor |
Nexperia |
| 2497 |
PN2222A |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 2498 |
PN2907A |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 2499 |
PPNGZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 2500 |
PPNHZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 2501 |
QM100HA-H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2502 |
QM10HA-HB |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2503 |
QM150HA-H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2504 |
QSL9 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 2505 |
QST6 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 2506 |
QST7 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 2507 |
QSX1 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 2508 |
QSX5 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 2509 |
QSX6 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 2510 |
QSX7 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 2511 |
RECOMMENDATIONS |
RF Silicon bipolar transistors general operational recommendations |
Philips |
| 2512 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 2513 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 2514 |
RGBC40M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A) |
International Rectifier |
| 2515 |
RM15TA-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2516 |
RM20TPM-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2517 |
RM20TPM-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2518 |
RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2519 |
RM30TA-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2520 |
RM30TB-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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